PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 11 March 2009
Product data sheet
1.Product profile
1.1General description
Low capacitance unidirectional double ElectroStatic Discharge(ESD) protection diodesina very small Surface-Mounted Device(SMD) plastic package designed to protect up totwosignal lines from the damage caused by ESD and other transients.
Table 1.
Product overview
PackageNXPPESD5V0L2UUPESD6V0L2UU
SOT323JEITASC-70very smallPackage configurationType number1.2Features
IUnidirectional ESDprotection of up totwolines
ILow diode capacitance: Cd=34pFIMax. peak pulse power: PPP=70WILow clamping voltage: VCL=13VIUltra low leakage current
IESDprotection up to30kVIIEC61000-4-2; level4 (ESD)
IIEC61000-4-5 (surge); IPP=6.5AIAEC-Q101 qualified
1.3Applications
IAudio and video equipmentIComputers and peripherals
ICellular handsets and accessories
ICommunication systemsIPortable electronics
ISubscriber Identity Module(SIM) cardprotection
1.4Quick reference data
Table 2.Quick reference data
Tamb=25°C unless otherwise specified.SymbolVRWM
Parameterreverse standoff voltagePESD5V0L2UUPESD6V0L2UU
----5.06.0
VV
ConditionsMinTypMaxUnit元器件交易网www.cecb2b.com
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
Table 2.Quick reference data …continuedTamb=25°C unless otherwise specified.SymbolCd
Parameterdiode capacitancePESD5V0L2UUPESD6V0L2UU
Conditionsf=1MHz; VR=0V
[1][2][1][2]
Min----
Typ19381734
Max23462040
UnitpFpFpFpF
[1][2]
Bidirectional configuration: measured from pin1to2 orpin2to1.Unidirectional configuration: measured from pin1to3 orpin2to3.
2.Pinning information
Table 3.Pin123
PinningDescriptioncathode(diode1)cathode(diode2)commonanode
1
2
12006aaa154Simplified outline3
Graphic symbol33.Ordering information
Table 4.
Ordering information
PackageNamePESD5V0L2UUPESD6V0L2UU
SC-70Descriptionplastic surface-mounted package; 3leadsVersionSOT323Type number4.Marking
Table 5.
Marking codes
Marking code[1]H1*H2*
Type numberPESD5V0L2UUPESD6V0L2UU
[1]
* = -: made in Hong Kong* = p: made in Hong Kong* = t: made in Malaysia* = W: made in China
PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 20092 of 13
元器件交易网www.cecb2b.com
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
5.Limiting values
Table 6.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).SymbolPer diodePPP
peak pulse powerPESD5V0L2UUPESD6V0L2UU
IPP
peak pulse currentPESD5V0L2UUPESD6V0L2UU
TjTambTstg
[1][2]
ParameterConditionstp=8/20µs
[1][2]
MinMaxUnit--tp=8/20µs
[1][2]
70606.55.5150+150+150
WWAA°C°C°C
---−55−65
junction temperatureambient temperaturestorage temperature
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.Measured from pin1or2topin3.
Table 7.ESD maximum ratings
Tamb=25°C unless otherwise specified.SymbolVESD
Parameterelectrostatic discharge voltage
ConditionsIEC61000-4-2(contact discharge)MIL-STD-883(humanbody model)
[1][2]
Device stressed with ten non-repetitive ESDpulses.Measured from pin1or2topin3.
[1]Min--
Max3016
UnitkVkV
[2]
Table 8.StandardESD standards compliance
Conditions>15kV(air); >8kV(contact)>4kV
IEC61000-4-2; level4(ESD)
MIL-STD-883; class3 (human body model)
PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 20093 of 13
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NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
001aaa631120IPP(%)80e−t100 % IPP; 8 µs001aaa630IPP100 %90 %50 % IPP; 20 µs4010 %tr = 0.7 ns to 1 ns0102030t (µs)4030 ns60 nst0Fig 1.8/20µs pulse waveform according toIEC61000-4-5Fig 2.ESDpulse waveform according toIEC61000-4-2PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 20094 of 13
元器件交易网www.cecb2b.com
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
6.Characteristics
Table 9.Characteristics
Tamb=25°C unless otherwise specified.SymbolVRWM
Parameterreverse standoff voltagePESD5V0L2UUPESD6V0L2UU
IRM
reverse leakage currentPESD5V0L2UUPESD6V0L2UUPESD5V0L2UUPESD6V0L2UU
VBR
breakdown voltagePESD5V0L2UUPESD6V0L2UU
Cd
diode capacitancePESD5V0L2UUPESD6V0L2UU
VCL
clamping voltagePESD5V0L2UUPESD6V0L2UU
rdif
differential resistancePESD5V0L2UUPESD6V0L2UU
[1][2][3][4]
Bidirectional configuration: measured from pin1to2 orpin2to1.Unidirectional configuration: measured from pin1to3 orpin2to3.
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.Measured from pin1or2topin3.
ConditionsMin--
Typ--201.54303106.26.819381734----
Max5.06.09018--6.67.2234620401313.52530
UnitVVnAnAnAnAVVpFpFpFpFVVΩΩ
VRWM=4.0VVRWM=4.3VVRWM=5.0VVRWM=6.0VIR=5mA
----5.86.4
f=1MHz; VR=0V
[1][2][1][2]
------
IPP=5.5A
[3][4]
IR=5mA
--
PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 20095 of 13
元器件交易网www.cecb2b.com
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
40Cd(pF)30(1)006aab43540Cd(pF)30006aab436(1)20(2)20(2)10100024VR (V)60024VR (V)6f=1MHz; Tamb=25°C(1)unidirectional(2)bidirectionalf=1MHz; Tamb=25°C(1)unidirectional(2)bidirectionalFig 3.PESD5V0L2UU: Diode capacitance as afunction of reverse voltage; typical valuesIFig 4.PESD6V0L2UU: Diode capacitance as afunction of reverse voltage; typical valuesIPP−VCL−VBR−VRWM−IRM−IR−P-N+V−VCL−VBR−VRWMIRIRM−IRM−IRVRWMVBRVCL−+−IPP006aaa407−IPP006aaa676Fig 5.V-Icharacteristics for a unidirectionalESDprotection diodeFig 6.V-Icharacteristics for a bidirectionalESDprotection diodePESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 20096 of 13
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NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
ESD TESTERRZ450 ΩRG 223/U50 Ω coax4 GHz DIGITALOSCILLOSCOPE10×ATTENUATOR50 ΩCZIEC 61000-4-2 networkCZ = 150 pF; RZ = 330 ΩDUT(DEVICEUNDERTEST)vertical scale = 10 A/divhorizontal scale = 15 ns/divvertical scale = 20 V/divhorizontal scale = 50 ns/divGNDGNDunclamped +8 kV ESD pulse waveform(IEC 61000-4-2 network)clamped +8 kV ESD pulse waveform(IEC 61000-4-2 network)vertical scale = 10 A/divhorizontal scale = 15 ns/divGNDvertical scale = 20 V/divhorizontal scale = 50 ns/divGNDunclamped −8 kV ESD pulse waveform(IEC 61000-4-2 network)clamped −8 kV ESD pulse waveform(IEC 61000-4-2 network)006aab437Fig 7.PESD5V0L2UU: ESD clamping test setup and waveformsPESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 20097 of 13
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NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
7.Application information
PESD5V0L2UU and PESD6V0L2UU are designed for the protection of up to two
unidirectional data or signal lines, or for the protection of one bidirectional data or signalline, from the damage caused by ESD. For unidirectional protection, the devices may beused on lines where the signal polarities are positive with respect to ground, and for
bidirectional protection, the devices may be used on lines where the signal polarities areboth, positive and negative with respect to ground.
For an 8/20µs waveform, the PESD5V0L2UU provides a surge capability of up to 70Wper line, and the PESD6V0L2UU provides a surge capability of up to 60W per line.
line 1 to be protectedline 1 to be protectedline 2 to be protectedDUTGNDDUTGNDbidirectional protectionof one lineunidirectional protectionof two lines006aab252Fig 8.Application diagramCircuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical FastTransient(EFT). The following guidelines are recommended:
1.Place the devices as close to the input terminal or connector as possible.2.The path length between the device and the protected line should be minimized.3.Keep parallel signal paths to a minimum.
4.Avoid running protected conductors in parallel with unprotected conductors.5.Minimize all Printed-Circuit Board(PCB) conductive loops including power andground loops.6.Minimize the length of the transient return path to ground.
7.Avoid using shared transient return paths to a common ground point.
8.Ground planes should be used whenever possible. For multilayer PCBs, use groundvias.
PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 20098 of 13
元器件交易网www.cecb2b.com
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
8.Test information
8.1Quality information
This product has been qualified in accordance with the Automotive Electronics Council(AEC) standardQ101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.
9.Package outline
2.21.830.450.151.10.82.21.352.01.15120.40.30.250.1004-11-041.3Dimensions in mmFig 9.Package outline SOT323(SC-70)10.Packing information
Table 10.Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]Type numberPESD5V0L2UUPESD6V0L2UU
[1]
For further information and the availability of packing methods, seeSection14.
PackageSOT323Description4mm pitch, 8mm tape and reelPacking quantity3000-11510000-135PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 20099 of 13
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NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
11.Soldering
2.651.851.325solder lands2solder resist1.30.5(3×)solder pasteoccupied areaDimensions in mm2.350.6(3×)310.55(3×)sot323_frFig 10.Reflow soldering footprint SOT323(SC-70)4.62.5751.425(3×)solder landssolder resistoccupied area3.652.11.8Dimensions in mmpreferred transportdirection during soldering09(2×)sot323_fwFig 11.Wave soldering footprint SOT323(SC-70)PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 200910 of 13
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NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
12.Revision history
Table 11.
Revision history
Release dateData sheet statusProduct data sheet
Change notice-Supersedes-Document IDPESD5V0L2UU_PESD6V0L2UU_120090311
PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 200911 of 13
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NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
13.Legal information
13.1Data sheet status
Document status[1][2]Objective [short] data sheetPreliminary [short] data sheetProduct [short] data sheet
[1][2][3]
Product status[3]DevelopmentQualificationProduction
DefinitionThis document contains data from the objective specification for product development.This document contains data from the preliminary specification.This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.The term ‘short data sheet’ is explained in section “Definitions”.
Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatusinformation is available on the Internet at URLhttp://www.nxp.com.
13.2Definitions
Draft —The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness of
informationincludedhereinandshallhavenoliabilityfortheconsequencesofuse of such information.
Short data sheet —A short data sheet is an extract from a full data sheetwiththesameproducttypenumber(s)andtitle.Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors salesoffice. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Applications —Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values —Stress above one or more limiting values (as defined intheAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanentdamagetothedevice.Limitingvaluesarestressratingsonlyandoperationofthe device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limitingvalues for extended periods may affect device reliability.
Terms and conditions of sale —NXP Semiconductors products are soldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.nxp.com/profile/terms, including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case ofany inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.
No offer to sell or license —Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsor other industrial or intellectual property rights.
Quick reference data —The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.ESD protection devices —These products are only intended for protectionagainst ElectroStatic Discharge (ESD) pulses and are not intended for anyotherusageincluding,withoutlimitation,voltageregulationapplications.NXPSemiconductorsacceptsnoliabilityforuseinsuchapplicationsandthereforesuch use is at the customer’s own risk.
Export control —This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from national authorities.
13.3Disclaimers
General —Information in this document is believed to be accurate and
reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformation and shall have no liability for the consequences of use of suchinformation.
Right to make changes —NXPSemiconductorsreservestherighttomakechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and withoutnotice.Thisdocumentsupersedesandreplacesallinformationsuppliedpriorto the publication hereof.
Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expectedto result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use ofNXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.
13.4Trademarks
Notice:Allreferencedbrands,productnames,servicenamesandtrademarksare the property of their respective owners.
14.Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PESD5V0L2UU_PESD6V0L2UU_1© NXP B.V. 2009. All rights reserved.
Product data sheetRev. 01 — 11 March 200912 of 13
元器件交易网www.cecb2b.com
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
15.Contents
1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 23Ordering information. . . . . . . . . . . . . . . . . . . . . 24Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 36Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 57Application information. . . . . . . . . . . . . . . . . . . 88Test information. . . . . . . . . . . . . . . . . . . . . . . . . 98.1Quality information . . . . . . . . . . . . . . . . . . . . . . 99Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 910Packing information. . . . . . . . . . . . . . . . . . . . . . 911Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1012Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1113Legal information. . . . . . . . . . . . . . . . . . . . . . . 1213.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1213.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1213.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1213.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1214Contact information. . . . . . . . . . . . . . . . . . . . . 1215
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)described herein, have been included in section ‘Legal information’.
© NXP B.V.2009.All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 March 2009
Document identifier: PESD5V0L2UU_PESD6V0L2UU_1
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