Method of forming buried wiring

专利名称：Method of forming buried wiring发明人：Takeshi Nogami,Naoki Komai,Koichi

Ikeda,Takashi Kinoshita,KoheiSuzuki,Nobuyuki Kawakami,YoshitoFukumoto

申请号：US10298665申请日：20021119公开号：US06777321B2公开日：20040817

专利附图：

摘要：A method of forming a buried wiring comprising the steps of: (A) forming a

wiring and a first insulating layer filled between the wirings on a substratum, (B)immersing the first insulating layer in a fluid which can dissolve the first insulating layer,to dissolve the first insulating layer into the fluid, (C) substituting, for the fluid, a rawmaterial solution containing a raw material for forming a second insulating layer, withoutbringing the wiring into contact with a gas, and (D) filling a second insulating layer formedby gelation in the raw material solution at least between the wirings, and then, drying offthe raw material solution, thereby to form the second insulating layer at least betweenthe wirings.

申请人：SONY CORPORATION,KABUSHIKI KAISHA KOBE SEIKO SHO

代理机构：Rader, Fishman & Grauer PLLC

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