专利名称：Method of Fabricating an Integrated Circuit发明人：Daniel Koehler,Johannes Heitmann,Michael
Obert
申请号：US11953550申请日：20071210
公开号：US20090149027A1公开日：20090611
专利附图：
摘要：Embodiments of the invention relate to a method of fabricating an integratedcircuit, including etching of a layer that includes a high k material in the form of a metaloxide composition, wherein an etchant is used that includes a silicon halogen composition.
申请人：Daniel Koehler,Johannes Heitmann,Michael Obert
地址：Chemnitz DE,Dresden DE,Dresden DE
国籍：DE,DE,DE
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