MEMORY DEVICE AND ASSOCIATED ERASE METHOD

专利名称：MEMORY DEVICE AND ASSOCIATED ERASE

METHOD

发明人：Yu-Ming Chang,Hsiang-Pang Li,Hung-Sheng

Chang,Chih-Chang Hsieh,Kuo-Pin Chang

申请号：US14684561申请日：20150413

公开号：US20160300617A1公开日：20161013

专利附图：

摘要：A memory device and an erase method for the memory device are provided.The memory device includes plural blocks and a controller. The plural blocks include at

least one first block and at least one second block. The erase method is controlled bythe controller and includes the following steps. A first stage erase operation and asecond stage erase operation are sequentially performed on the at least one first blockin a first time interval and a second time interval. The first stage erase operation and thesecond stage erase operation are sequentially performed on the at least one secondblock in the second time interval and a third time interval.

申请人：MACRONIX INTERNATIONAL CO., LTD.

地址：Hsinchu TW

国籍：TW

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