CMOS device and method of forming the same

专利名称：CMOS device and method of forming the

same

发明人：Kuo-Cheng Ching,Shi Ning Ju,Cary Chia-Chiung Lo,Huicheng Chang,Chun Chung Su

申请号：US14170102申请日：20140131公开号：US027362B2公开日：20150106

专利附图：

摘要：A semiconductor device and method for fabricating a semiconductor device isdisclosed. An exemplary semiconductor device includes a substrate including a first

region and a second region. The semiconductor device further includes a first buffer layerformed over the substrate and between first and second isolation regions in the firstregion and a second buffer layer formed over the substrate and between first andsecond isolation regions in the second region. The semiconductor device further includesa first fin structure formed over the first buffer layer and between the first and secondisolation regions in the first region and a second fin structure formed over the secondbuffer layer and between the first and second isolation regions in the second region. Thefirst buffer layer includes a top surface different from a top surface of the second bufferlayer.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Haynes and Boone, LLP

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