专利名称：SEMICONDUCTOR STRUCTURE AND
METHOD FOR MAKING SAME
发明人：Hans-Joachim BARTH,Mathias
VAUPEL,Rainer STEINER,Werner ROBL,JensPOHL,Joern PLAGMANN,Gottfried BEER
申请号：US13671573申请日：20121108
公开号：US20130062770A1公开日：20130314
专利附图：
摘要：One or more embodiments relate to a semiconductor structure, comprising: a
barrier layer overlying a workpiece surface; a seed layer overlying the barrier layer; aninhibitor layer overlying said seed layer, the inhibitor layer having a opening exposing aportion of the seed layer, and a fill layer overlying the exposed portion of the seed layer.
申请人：Infineon Technologies AG
地址：US
国籍：US
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