专利名称：Method of forming a polycrystalline silicon
layer
发明人：Myoung-Su Yang申请号：US11002274申请日：20041203
公开号：US20050095823A1公开日：20050505
专利附图：
摘要：A method of forming a polycrystalline silicon layer. An amorphous silicon layeron a substrate is completely melted using a laser beam passed through a mask so as toform a polycrystalline silicon layer. The upper portion of the polycrystalline silicon layer
is then re-melted and re-crystallized using a laser beam passed through a mask. Themask includes a high transmittance region for completely melting the amorphous siliconlayer and a low transmittance region for re-melting the upper portion of thepolycrystalline silicon layer.
申请人：Myoung-Su Yang
地址：Kunpo-shi KR
国籍：KR
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