Contact plating apparatus

专利名称：Contact plating apparatus

发明人：Nicolay Kovarsky,Michael Yang,Dmitry

Lubomirsky

申请号：US11345011申请日：20060201

公开号：US20060124468A1公开日：20060615

专利附图：

摘要：Embodiments of the invention generally provide a substrate processing systemand method. The substrate processing system generally includes a fluid basin configuredto contain a plating solution therein, an anode assembly positioned in a lower portion of

the fluid basin, a separation membrane positioned across the fluid basin above the anodeassembly, a diffusion member positioned across the fluid basin above the separationmembrane, and a plating membrane positioned across the fluid basin above the diffusionmember. The plating method generally includes immersing the substrate in a platingsolution, the plating solution containing metal ions to be plated, contacting a platingsurface of the semiconductor substrate with a plating membrane, applying a plating biasto the semiconductor substrate to plate the metal ions in the plating solution positionedadjacent the plating surface of the substrate, removing the plating surface from contactwith the plating membrane for a predetermined period of time, and recontacting theplating surface with the plating membrane to continue plating the metal ions onto theplating surface.

申请人：Nicolay Kovarsky,Michael Yang,Dmitry Lubomirsky

地址：Sunnyvale CA US,Palo Alto CA US,Cupertino CA US

国籍：US,US,US

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