INTEGRATED CIRCUIT COMB CAPACITOR

专利名称：INTEGRATED CIRCUIT COMB CAPACITOR发明人：Daniel C. Edelstein,Anil K.

Chinthakindi,Timothy J. Dalton,Ebenezer E.Eshun,Jeffrey P. Gambino,Sarah L.Lane,Anthony K. Stamper

申请号：US11306746申请日：20060110

公开号：US20070158717A1公开日：20070712

专利附图：

摘要：The invention is directed to an integrated circuit comb capacitor with capacitor

electrodes that have an increased capacitance between neighboring capacitor electrodesas compared with other interconnects and via contacts formed in the same metal wiringlevel and at the same pitches. The invention achieves a capacitor that minimizes

capacitance tolerance and preserves symmetry in parasitic electrode-substrate capacitivecoupling, without adversely affecting other interconnects and via contacts formed in thesame wiring level, through the use of, at most, one additional noncritical, photomask.

申请人：Daniel C. Edelstein,Anil K. Chinthakindi,Timothy J. Dalton,Ebenezer E.Eshun,Jeffrey P. Gambino,Sarah L. Lane,Anthony K. Stamper

地址：White Plains NY US,Wappingers Falls NY US,Ridgefield CT US,Newburgh NYUS,Westford VT US,Wappingers Falls NY US,Williston VT US

国籍：US,US,US,US,US,US,US

更多信息请下载全文后查看