C32740

Switching and Amplifier Applications

•Suitable for AF-Driver stages and low power output stages•Complement to BC337/BC338

TO-92

1

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

SymbolVCES

Parameter

Collector-Emitter Voltage

: BC327 : BC328Collector-Emitter Voltage

: BC327 : BC328Emitter-Base VoltageCollector Current (DC)Collector Power DissipationJunction TemperatureStorage Temperature

Value-50-30-45-25-5-800625150-55 ~ 150

UnitsVVVVVmAmW°C°C

VCEO

VEBOICPCTJTSTG

Electrical Characteristics Ta=25°C unless otherwise noted

SymbolBVCEO

Parameter

Collector-Emitter Breakdown Voltage

: BC327 : BC328Collector-Emitter Breakdown Voltage

: BC327 : BC328Emitter-Base Breakdown VoltageCollector Cut-off Current

: BC327: BC328DC Current Gain

Collector-Emitter Saturation VoltageBase-Emitter On VoltageCurrent Gain Bandwidth ProductOutput Capacitance

Test Condition

IC= -10mA, IB=0

Min.-45-25-50-30-5

-2-2

-100-100630-0.7-1.2

10012

VVMHzpF

Typ.

Max.

UnitsVVVVVnAnA

BVCESIC= -0.1mA, VBE=0

BVEBOICES

IE= -10µA, IC=0VCE= -45V, VBE=0VCE= -25V, VBE=0VCE= -1V, IC= -100mAVCE= -1V, IC= -300mAIC= -500mA, IB= -50mAVCE= -1V, IC= -300mA

VCE= -5V, IC= -10mA, f=20MHzVCB= -10V, IE=0, f=1MHz

100 40

hFE1hFE2VCE (sat)VBE (on)fTCob

hFE Classification

Classification

hFE1hFE2

16100 ~ 250

60-25160 ~ 400100-40250 ~ 630170-

©2002 Fairchild Semiconductor CorporationRev. B1, August 2002

BC327/328Typical Characteristics -500 -20IC[mA], COLLECTOR CURRENTIC[mA], COLLECTOR CURRENT-400-3000mAA - 5.IB =- 4.5m IB = 4.0mAA -IB = - 3.5mAIB = - 3.0mAIB = - 2.5mIB =0mA - 2.IB =µA- 80µAIB = - 70IB = -16µA- 60IB = PTµA- 50IB = µA- 40IB = 30µAIB = - = 600mW-12 1IB = --200IB = - 1.0mAIB = - 0.5mAPT = 60-80mW0µAIB = - 2-4-100-0-1-2IB = 0-3-4-5IB = - 10µAIB = 0-10-20-30-40-50VCE[V], COLLECTOR-EMITTER VOLTAGEVCE[V], COLLECTOR-EMITTER VOLTAGEFigure 1. Static CharacteristicFigure 2. Static Characteristic 1000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE-10PULSEVCE = - 2.0VIC = 10 IBPULSEVCE(sat)hFE, DC CURRENT GAIN100-1- 1.0V 10-0.1VBE(sat)1-0.1-1-10-100-1000-0.01-0.1-1-10-100-1000IC[mA], COLLECTOR CURRENTIC[mA], COLLECTOR CURRENTFigure 3. DC current GainFigure 4. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage -10001000 VCE = -5.0V-100-10fT[MHz], GAIN-BANDWIDTH PRODUCTIC[mA], COLLECTOR CURRENTVCE = -1VPULSE100 -1-0.1-0.4-0.5-0.6-0.7-0.8-0.910-1-10-100VBE[V], BASE-EMITTER VOLTAGEIC[mA], COLLECTOR CURRENTFigure 5. Base-Emitter On VoltageFigure 6. Gain Bandwidth Product©2002 Fairchild Semiconductor CorporationRev. B1, August 2002

.5mA BC327/328Package DimensionsTO-924.58–0.15+0.250.46 ±0.1014.47 ±0.404.58 ±0.201.27TYP[1.27 ±0.20]3.60 ±0.201.27TYP[1.27 ±0.20]0.38–0.05+0.103.86MAX1.02 ±0.100.38–0.05+0.10(R2.29)(0.25)Dimensions in Millimeters©2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002

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ACEx™FACT™ActiveArray™FACT Quiet series™Bottomless™FAST®

FASTr™CoolFET™

CROSSVOLT™FRFET™

GlobalOptoisolator™DOME™

EcoSPARK™GTO™2CMOS™EHiSeC™EnSigna™I2C™

Across the board. Around the world.™The Power Franchise™

Programmable Active Droop™DISCLAIMER

ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®OPTOPLANAR™PACMAN™POP™

Power247™PowerTrench®QFET™QS™

QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™

SILENT SWITCHER®SMART START™

SPM™Stealth™

SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™

TruTranslation™UHC™UltraFET®VCX™

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

Datasheet IdentificationAdvance Information

Product StatusFormative or In DesignFirst Production

Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Preliminary

No Identification NeededFull Production

ObsoleteNot In Production

©2002 Fairchild Semiconductor CorporationRev. I1