MEMORY DEVICE HAVING SENSING CIRCUITRY WITH AUTOMA

专利名称：MEMORY DEVICE HAVING SENSING

CIRCUITRY WITH AUTOMATIC LATCHINGOF SENSE AMPLIFIER OUTPUT NODE

发明人：Md Rahim Chand Sk申请号：US134008申请日：20120221

公开号：US20130215685A1公开日：20130822

专利附图：

摘要：A memory device includes a memory array comprising a plurality of memorycells arranged in rows and columns, and sensing circuitry coupled to bitlines associated

with respective columns of the memory cells of the memory array. The sensing circuitrycomprises, for at least a given one of the bitlines of the memory array, a sense amplifierconfigured to sense data on the given bitline, with the sense amplifier having at least oneinternal node and at least one output node. The sensing circuitry further comprises alatch circuit having a data input coupled to the output node and a control input coupledto the internal node, with the latch circuit being configured to latch sensed data from theoutput node responsive to a signal at the internal node.

申请人：Md Rahim Chand Sk

地址：Bangalore IN

国籍：IN

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